vn10/0605/0610/2222 series siliconix s-52429erev. e, 28-apr-97 1 n-channel enhancement-mode mosfet transistors vn10le VN0605T vn2222ll vn10lm vn0610ll vn2222lm product summary part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d min (a) vn10le 5 @ v gs = 10 v 0.8 to 2.5 0.38 vn10lm 5 @ v gs = 10 v 0.8 to 2.5 0.32 VN0605T 60 5 @ v gs = 10 v 0.8 to 3.0 0.18 vn0610ll 60 5 @ v gs = 10 v 0.8 to 2.5 0.28 vn2222ll 7.5 @ v gs = 5 v 0.6 to 2.5 0.23 vn2222lm 7.5 @ v gs = 5 v 0.6 to 2.5 0.26 features benefits applications low on-resistance: 2.5 low threshold: <2.1 v low input capacitance: 22 pf fast switching speed: 7 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffering high-speed circuits low error voltage direct logic-level interface: ttl/cmos solid state relays drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems VN0605T (v2)* *marking code for to-236 to-237 (tab drain) top view s d g 1 2 3 to-206ac (to-52) top view d g s 1 23 to-226aa (to-92) top view s d g 1 2 3 g to-236 (sot-23) s d top view 2 3 1 vn10le vn10lm vn2222lm vn0610ll vn2222ll updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70212.
vn10/0605/0610/2222 series 2 siliconix s-52429erev. e, 28-apr-97 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vn10le b vn10lm VN0605T vn0610ll vn2222ll vn2222lm unit drain-source voltage v ds 60 60 60 60 60 60 gate-source voltageenon-repetitive c v gsm 30 30 30 30 30 v gate-source voltageecontinuous v gs 20 20 20 20 20 20 continuous drain current t a = 25 c i d 0.38 0.32 0.18 0.28 0.23 0.26 (t j = 150 c) t a = 100 c i d 0.24 0.2 0.11 0.17 0.14 0.16 a pulsed drain current a i dm 1.0 1.4 0.72 1.3 1.0 1.0 power dissipation t a = 25 c p d 1.5 1.0 0.36 0.8 0.8 1.0 w power dissipation t a = 100 c p d 0.6 0.4 0.14 0.32 0.32 0.4 w maximum junction-to-ambient r thja 400 125 350 156 156 125 c/ w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. b. reference case for all temperature testing. c. t p 50 s. specifications a limits vn10le vn10lm vn0610ll VN0605T vn2222ll vn2222lm parameter symbol test conditions typ b min max min max min max unit static drain-source v (br)dss v gs = 0 v, i d = 100 a 70 60 60 breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 70 60 v gate-threshold voltage v gs(th) v ds = v gs , i d = 1 ma 2.1 0.8 2.5 0.8 3.0 0.6 2.5 v ds = 0 v, v gs = 20 v 100 e 100 100 gate-body leakage i gss t j =125 c 500 na v ds = 0 v, v gs = 30 v 100 v ds = 50 v, v gs = 0 v 10 1.0 zero gate-voltage i dss t j = 125 c 500 500 a g drain current i dss v ds = 48 v, v gs = 0 v 10 a t j = 125 c 500 on-state drain current c i d(on) v ds = 10 v, v gs = 10 v 1000 750 500 750 ma v gs = 4.5 v, i d = 50 ma 4.5 7.5 drain-source r ds( ) v gs = 5 v, i d = 0.2 a 4.5 7.5 7.5 on-resistance c r ds(on) v gs = 10 v, i d = 0.5 a 2.4 5 5 7.5 t j = 125 c 4.4 9 10 13.5 forward g f v ds = 10 v, i d = 0.5 a 230 100 100 ms transconductance c g fs v ds = 10 v, i d = 0.2 a 180 80 ms common source output conductance c g os v ds = 5 v, i d = 50 ma 500 s
vn10/0605/0610/2222 series siliconix s-52429erev. e, 28-apr-97 3 specifications a limits vn10le vn10lm vn0610ll VN0605T vn2222ll vn2222lm parameter symbol test conditions typ b min max min max min max unit dynamic input capacitance c iss 22 60 60 60 output capacitance c oss v ds =25 v, v gs = 0 v f 1 mhz 11 25 25 25 p f reverse transfer capacitance c rss f = 1 mh z 2 5 5 5 pf switching d turn-on time t on
7 10 10 turn-off time t off
7 10 10 ns turn-on time t on
02 7 20 ns turn-off time t off 0 . 2
11 20 notes a. t a = 25 c unless otherwise noted. vnbf06 b. typical values are for design aid only, not guaranteed nor subject to production testing. c. pulse test: pw 300 s duty cycle 3%. d. switching time is essentially independent of operating temperature. e. vn10le only. typical characteristics (25 c unless otherwise noted) 0 0.2 0.4 0.6 0.8 1.0 0123456 0 0.2 0.4 0.6 0.8 1.0 012345678 output characteristics transfer characteristics v ds drain-to-source voltage (v) drain current (a) i d v gs = 10, 9, 8, 7 v 6.5 v v gs gate-to-source voltage (v) drain current (a) i d t a = 55 c 25 c 125 c 6 v 5.5 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 2, 1 v
vn10/0605/0610/2222 series 4 siliconix s-52429erev. e, 28-apr-97 typical characteristics (25 c unless otherwise noted) 0 4 8 12 16 20 0 400 800 1200 1600 2000 2400 0 0.5 1.0 1.5 2.0 55 30 5 20 45 70 95 120 145 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 gate charge on-resistance vs. drain current gate-to-source voltage (v) q g total gate charge (pc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 30 v i d = 0.5 a on-resistance ( r ds(on) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 10 v, r ds @ 0.5 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) r ds @ 10 v = v gs r ds @ 5 v = v gs t j = 25 c v gs = 5 v, r ds @ 0.05 a v gs = 0 v f = 1 mhz 0.001 0.010 0.100 1.000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 source-drain diode forward voltage on-resistance vs. gate-to-source voltage on-resistance ( r ds(on) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s 0 1 2 3 4 5 6 0 2 4 6 8 101214161820 500 ma r ds = 50 ma t j = 125 c t j = 25 c
vn10/0605/0610/2222 series siliconix s-52429erev. e, 28-apr-97 5 typical characteristics (25 c unless otherwise noted) threshold voltage t j temperature ( c) 0.75 0.50 0.25 0.00 0.25 0.50 50 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 1 100 10 1 k normalized effective transient thermal impedance, junction-to-ambient (to-226aa) normalized effective transient thermal impedance t 1 square wave pulse duration (sec) 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2
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